Toshiba
JDV2S36E
DIODE 46.75 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE, ESC, 1-1G1A, 2 PIN, Variable Capacitance Diode
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Technical Specifications
Toshiba JDV2S36E technical specifications.
General
Max Operating Temperature
125
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Breakdown Voltage-Min
10
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.80
REACH
unknown
Military Spec
False
Datasheet
Toshiba JDV2S36E Datasheet
Download the complete datasheet for Toshiba JDV2S36E to view detailed technical specifications.
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