
NPN Darlington transistor featuring a 115V collector-emitter voltage and 2A continuous DC collector current. This quad-configuration bipolar junction transistor offers 4000mW maximum power dissipation and a minimum DC current gain of 2000. Housed in a 10-pin SIP package with through-hole mounting, it operates across a temperature range of -55°C to 150°C.
Toshiba MP4021(LBSEP) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 25.2 |
| Package Width (mm) | 4 |
| Package Height (mm) | 9 |
| Seated Plane Height (mm) | 11.3 |
| Package Weight (g) | 2.1 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 115V |
| Maximum Collector Base Voltage | 85V |
| Maximum Emitter Base Voltage | 8V |
| Maximum Continuous DC Collector Current | 2A |
| Maximum Power Dissipation | 4000mW |
| Maximum Base Emitter Saturation Voltage | 2@1mA@1AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@1mA@1AV |
| Minimum DC Current Gain | 2000@1A@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba MP4021(LBSEP) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.