NPN Darlington transistor featuring a 100V collector-emitter voltage and 4A continuous DC collector current. This quad-configuration transistor offers 4000mW maximum power dissipation and a high DC current gain of 1000 at 3A/2V or 2000 at 1.5A/2V. Encased in a 10-pin SIP plastic package with through-hole mounting, it operates within a -55°C to 150°C temperature range.
PackageSIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba MP4104(MBS-H) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 25.2 |
| Package Width (mm) | 4 |
| Package Height (mm) | 9 |
| Seated Plane Height (mm) | 11.3 |
| Package Weight (g) | 2.1 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Quad |
| Number of Elements per Chip | 4 |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Continuous DC Collector Current | 4A |
| Maximum Power Dissipation | 4000mW |
| Maximum Base Emitter Saturation Voltage | 2@[email protected]V |
| Maximum Collector-Emitter Saturation Voltage | 1.5@[email protected]V |
| Minimum DC Current Gain | 1000@3A@2V|[email protected]@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MP4104(MBS-H) Datasheet
Download the complete datasheet for Toshiba MP4104(MBS-H) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.