Quad NPN Darlington transistor for through-hole mounting. Features a 12-pin SIP package with 100V collector-emitter voltage and 3A continuous collector current. Offers a maximum power dissipation of 4400mW and a wide operating temperature range from -55°C to 150°C. Includes high DC current gain of up to 2000.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba MP4301(LB1HITACHI3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
12
PCB
12
Package Length (mm)
31.5
Package Width (mm)
4
Package Height (mm)
10.5
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Quad
Number of Elements per Chip
4
Maximum Collector-Emitter Voltage
100V
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
6V
Maximum Continuous DC Collector Current
3A
Maximum Power Dissipation
4400mW
Maximum Base Emitter Saturation Voltage
Maximum Collector-Emitter Saturation Voltage
1.5@[email protected]V
Minimum DC Current Gain
1000@3A@2V|[email protected]@2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba MP4301(LB1HITACHI3 Datasheet
Download the complete datasheet for Toshiba MP4301(LB1HITACHI3 to view detailed technical specifications.
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