Quad N-channel enhancement mode power MOSFET, silicon, with a maximum drain-source voltage of 60V and continuous drain current of 5A. Features a 12-pin Single In Line Package (SIP) with through-hole mounting, measuring 31.5mm in length, 4mm in width, and 10.5mm in height. Offers a maximum power dissipation of 4400mW and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum drain-source resistance of 160mΩ at 10V and typical gate charge of 12nC at 10V.
PackageSIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba MP4410(LB1ZEC) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 12 |
| PCB | 12 |
| Package Length (mm) | 31.5 |
| Package Width (mm) | 4 |
| Package Height (mm) | 10.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Quad |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 370@10VpF |
| Maximum Power Dissipation | 4400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MP4410(LB1ZEC) Datasheet
Download the complete datasheet for Toshiba MP4410(LB1ZEC) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.