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Technical Specifications
Toshiba MP4711(LB1) technical specifications.
General
| Configuration | Quad |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 230@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Power Dissipation | 5000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MP4711(LB1) Datasheet
Download the complete datasheet for Toshiba MP4711(LB1) to view detailed technical specifications.
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