NPN RF Bipolar Junction Transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin USM package (SOT-323) with dimensions of 2mm length, 1.25mm width, and 0.9mm height. Offers a maximum collector-emitter voltage of 5V, maximum collector current of 0.04A, and maximum power dissipation of 100mW. Exhibits a minimum DC current gain of 80 at 5mA/1V, a typical transition frequency of 1000MHz, and a maximum noise figure of 3dB. Operates within a temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba MT3S03AU(TE85L,F) technical specifications.
General
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5V |
| Maximum Collector Base Voltage | 10V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 80@5mA@1V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 1000(Typ)MHz |
| Maximum Noise Figure | 3dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 3V/20mA |
| Typical Power Gain | 8dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba MT3S03AU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba MT3S03AU(TE85L,F) to view detailed technical specifications.
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