NPN RF BJT transistor for surface mount applications. Features a 6V collector-emitter voltage, 0.1A DC collector current, and 160mW power dissipation. Utilizes SiGe material with a minimum DC current gain of 200 at 50mA/5V. Achieves a maximum transition frequency of 11.5GHz and a maximum noise figure of 1.2dB. Packaged in a 3-pin S-Mini lead-frame SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba MT3S111(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
SiGe
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
6V
Maximum Emitter Base Voltage
0.6V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
160mW
Minimum DC Current Gain
200@50mA@5V
Minimum DC Current Gain Range
200 to 300
Maximum Transition Frequency
11500(Typ)MHz
Maximum Noise Figure
1.2dB
Typical Output Capacitance
1.45pF
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Operational Bias Conditions
5V/30mA
Maximum 3rd Order Intercept Point
32(Typ)dBm
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba MT3S111(TE85L,F) Datasheet
Download the complete datasheet for Toshiba MT3S111(TE85L,F) to view detailed technical specifications.
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