NPN RF Transistor, single element silicon device for surface mount applications. Features a 6V maximum collector-emitter voltage and 0.08A maximum DC collector current. Offers 1800mW maximum power dissipation and a typical transition frequency of 9000MHz. Housed in a 4-pin (3+Tab) PW-Mini SOT package with flat leads, measuring 4.6mm max length, 2.5mm width, and 1.6mm max height. Operates within a temperature range of -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba MT3S21P technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 6V |
| Maximum Collector Base Voltage | 12V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 1800mW |
| Minimum DC Current Gain | 100@50mA@5V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 9000(Typ)MHz |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MT3S21P Datasheet
Download the complete datasheet for Toshiba MT3S21P to view detailed technical specifications.
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