NPN RF Bipolar Junction Transistor for surface mount applications. Features a 3-pin TESM package with 0.45mm pin pitch, 1.4mm length, 0.8mm width, and 0.59mm height. Operates with a maximum collector-emitter voltage of 4.5V and a maximum collector current of 0.024A. Achieves a maximum transition frequency of 20GHz and a typical noise figure of 1.9dB, with a typical power gain of 18dB under 3V/10mA bias. Silicon material with a maximum power dissipation of 100mW.
PackageTESM
MountingSurface Mount
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Technical Specifications
Toshiba MT3S35T(TE85L,F) technical specifications.
General
| Package/Case | TESM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.4 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.59 |
| Pin Pitch (mm) | 0.45 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 4.5V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.024A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 70@10mA@3V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 20000(Typ)MHz |
| Maximum Noise Figure | 1.9dB |
| Typical Output Capacitance | 0.46pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 3V/10mA |
| Typical Power Gain | 18dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba MT3S35T(TE85L,F) Datasheet
Download the complete datasheet for Toshiba MT3S35T(TE85L,F) to view detailed technical specifications.
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