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Technical Specifications
Toshiba MT3S41FS(TPL3) technical specifications.
General
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 4.5V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 70@20mA@3V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 15000(Typ)MHz |
| Maximum Noise Figure | 1.8dB |
| Typical Output Capacitance | 0.72pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 3V/20mA |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba MT3S41FS(TPL3) Datasheet
Download the complete datasheet for Toshiba MT3S41FS(TPL3) to view detailed technical specifications.
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