TOSHIBA Field Effect Transistor Silicon N Channel MOS Type for VHF- and UHF-band Amplifier Applications. Features include typical output power of 70W, gain of 7.7dB, and drain efficiency of 50%. Intended for high frequency Power Amplifier of telecommunications equipment.
PackageRF-D
MountingScrew
Power72(Typ)@Mos 1|90(Typ)@Mos 2W
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Technical Specifications
Toshiba RFM70U12D technical specifications.
General
| Package/Case | RF-D |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 25 |
| Package Width (mm) | 17 |
| Package Height (mm) | 6.2 |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Dual |
| Channel Mode | Depletion |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30@Mos 1|17@Mos 2V |
| Maximum Continuous Drain Current | 15A |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
| Power gain (f=175MHz, VDS=12.5V, Iidle=2A, Pi=2W) | 16.5dB |
| Load mismatch (f=520MHz, VDS=15.2V, Po=70W, Iidle=9A, VSWR LOAD 20:1) | No degradation |
| Load mismatch (f=175MHz, VDS=15.2V, Po=70W, Iidle=2A, VSWR LOAD 20:1) | No degradation |
| Output Power | 72(Typ)@Mos 1|90(Typ)@Mos 2W |
Compliance
| Cage Code | S0562 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba RFM70U12D Datasheet
Download the complete datasheet for Toshiba RFM70U12D to view detailed technical specifications.
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