
NPN digital bipolar junction transistor, single configuration, designed for surface mount applications. Features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA, with a power dissipation of 100mW. Housed in a 3-pin SSM (SOT-416) plastic package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Includes a typical input resistor of 2.2 kOhm and a minimum DC current gain of 80. Operates within a temperature range of -55°C to 150°C.
Toshiba RN1105(T5L,PP,F) technical specifications.
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