NPN Digital Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. Offers 100mW maximum power dissipation and a 3-pin ESM package with flat leads. Includes a typical input resistor of 2.2 kOhm and operates across a temperature range of -55°C to 150°C.
PackageESM
MountingSurface Mount
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Technical Specifications
Toshiba RN1105F(TH3MAT-V,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
ESM
Package/Case
ESM
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.85
Package Height (mm)
0.7
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SC-89
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
100mW
Typical Input Resistor
2.2kOhm
Typical Resistor Ratio
0.0468
Maximum Collector-Emitter Saturation Voltage
[email protected]@5mAV
Minimum DC Current Gain
80@10mA@5V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba RN1105F(TH3MAT-V,F Datasheet
Download the complete datasheet for Toshiba RN1105F(TH3MAT-V,F to view detailed technical specifications.
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