NPN Digital Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. This single-configuration transistor offers a typical input resistance of 47 kOhm and a minimum DC current gain of 120. Housed in a compact 3-pin SSM (SOT-416) plastic package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Operates across a wide temperature range from -55°C to 150°C.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba RN1113(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
100mW
Typical Input Resistor
47kOhm
Maximum Collector-Emitter Saturation Voltage
[email protected]@5mAV
Minimum DC Current Gain
120@1mA@5V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba RN1113(TE85L,F) Datasheet
Download the complete datasheet for Toshiba RN1113(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.