The RN1226(TPE4) is a single NPN transistor from Toshiba with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 800mA. It has a maximum power dissipation of 300mW and a typical input resistor of 1. The transistor is mounted through a hole and has a minimum DC current gain of 90 at 100mA and 5V. It operates over a temperature range of -55°C to 150°C.
MountingThrough Hole
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Technical Specifications
Toshiba RN1226(TPE4) technical specifications.
General
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 800mA |
| Maximum Power Dissipation | 300mW |
| Typical Input Resistor | 1kOhm |
| Typical Resistor Ratio | 0.1 |
| Maximum Collector-Emitter Saturation Voltage | 0.25@1mA@50mAV |
| Minimum DC Current Gain | 90@100mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba RN1226(TPE4) Datasheet
Download the complete datasheet for Toshiba RN1226(TPE4) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.