NPN digital bipolar junction transistor (BJT) for surface mount applications. Features a 50V maximum collector-emitter voltage and 800mA maximum continuous DC collector current. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Includes a typical input resistor of 0.47 kOhm and a minimum DC current gain of 90. Operates across a temperature range of -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba RN1425(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
800mA
Maximum Power Dissipation
200mW
Typical Input Resistor
0.47kOhm
Typical Resistor Ratio
0.047
Maximum Collector-Emitter Saturation Voltage
0.25@2mA@50mA|0.25@1mA@50mAV
Minimum DC Current Gain
90@100mA@1V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba RN1425(TE85R,F) Datasheet
Download the complete datasheet for Toshiba RN1425(TE85R,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.