NPN Digital BJT Transistor, 50V Collector-Emitter Voltage, 800mA Continuous Collector Current, 200mW Power Dissipation. Features a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Includes a typical 1 kOhm input resistor with a 0.1 resistor ratio. Operates across a temperature range of -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba RN1426(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
800mA
Maximum Power Dissipation
200mW
Typical Input Resistor
1kOhm
Typical Resistor Ratio
0.1
Maximum Collector-Emitter Saturation Voltage
0.25@2mA@50mA|0.25@1mA@50mAV
Minimum DC Current Gain
90@100mA@1V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba RN1426(TE85L,F) Datasheet
Download the complete datasheet for Toshiba RN1426(TE85L,F) to view detailed technical specifications.
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