NPN digital bipolar junction transistor (BJT) for surface mount applications. Features a dual common emitter configuration with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. Housed in a 5-pin SMV (SOT-25) SSOP package with gull-wing leads, measuring 2.9mm x 1.6mm x 1.1mm. Includes a typical input resistor of 10 kOhm and a maximum power dissipation of 300mW, operating from -55°C to 150°C.
Toshiba RN1502(T5LND) technical specifications.
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