
NPN digital bipolar junction transistor featuring a dual common emitter configuration. This surface-mount device offers a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. Housed in a 5-pin SMV (SOT-25) SSOP package with gull-wing leads, it has a package length of 2.9mm and width of 1.6mm. Key specifications include a maximum power dissipation of 300mW, a typical input resistor of 4.7 kOhm, and a minimum DC current gain of 120. Operating temperature range is -55°C to 150°C.
Toshiba RN1510(TE85R) technical specifications.
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