NPN digital bipolar junction transistor (BJT) for surface mount applications. Features a dual common emitter configuration with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. Housed in a compact 5-pin USV package (2mm x 1.25mm x 0.9mm) with gull-wing leads and a 0.65mm pin pitch. Offers a typical input resistor of 10 kOhm and operates across a wide temperature range from -55°C to 150°C.
Toshiba RN1707(TE85L,F) technical specifications.
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