NPN digital bipolar junction transistor (BJT) for surface mount applications. Features dual common emitter configuration, 50V collector-emitter voltage, and 100mA continuous collector current. Delivers 100mW maximum power dissipation within a compact 1.6mm x 1.2mm x 0.55mm ESV package. Includes integrated 47kΩ input resistor with a 2.14 resistor ratio. Operates across a wide temperature range from -55°C to 150°C.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba RN1709JE(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | ESV |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.55 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual Common Emitter |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 100mW |
| Typical Input Resistor | 47kOhm |
| Typical Resistor Ratio | 2.14 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 70@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba RN1709JE(TE85L,F) Datasheet
Download the complete datasheet for Toshiba RN1709JE(TE85L,F) to view detailed technical specifications.
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