
PNP Digital BJT transistor, single configuration, designed for through-hole mounting in a 3-pin TO-92 plastic package. Features a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. Offers a maximum power dissipation of 400mW, with a typical input resistor of 22 kOhm and a resistor ratio of 0.468. Operates across a temperature range of -55°C to 150°C.
Toshiba RN2008(F) technical specifications.
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