
PNP Digital Transistor, BJT, featuring a 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. This single-configuration transistor is housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Key specifications include a 400mW maximum power dissipation, a typical input resistor of 47 kOhm, and a minimum DC current gain of 70. Operating temperature range spans from -55°C to 150°C.
Toshiba RN2009(TPE2) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | PNP |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 400mW |
| Typical Input Resistor | 47kOhm |
| Typical Resistor Ratio | 2.14 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 70@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba RN2009(TPE2) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.