PNP Digital BJT transistor, dual common emitter configuration, rated for 50V maximum collector-emitter voltage and 100mA maximum continuous DC collector current. Features 300mW maximum power dissipation, 22 kOhm typical input resistance, and a 1:1 typical resistor ratio. Housed in a 5-pin SMV (SOT-25) SSOP package with gull-wing leads for surface mounting. Operates across a temperature range of -55°C to 150°C.
PackageSMV
MountingSurface Mount
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Technical Specifications
Toshiba RN2503(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSOP
Package/Case
SMV
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
5
PCB
5
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.014
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-25
Type
PNP
Configuration
Dual Common Emitter
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
300mW
Typical Input Resistor
22kOhm
Typical Resistor Ratio
1
Maximum Collector-Emitter Saturation Voltage
[email protected]@5mAV
Minimum DC Current Gain
70@10mA@5V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba RN2503(TE85L,F) Datasheet
Download the complete datasheet for Toshiba RN2503(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.