
Dual NPN/PNP digital bipolar junction transistor (BJT) for surface mount applications. Features a 5-pin USV package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm. Operates with a maximum collector-emitter voltage of 50V and a continuous DC collector current of 100mA, offering a maximum power dissipation of 200mW. Includes a typical input resistor of 10 kOhm and a minimum DC current gain of 50. Suitable for operation across a wide temperature range from -55°C to 150°C.
Toshiba RN47A3(TE85R) technical specifications.
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