Digital Transistor (BRT) featuring NPN and PNP configurations in a dual, 5-pin USV surface-mount package. This component offers a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA, with a power dissipation of 200mW. Key specifications include typical input resistors of 47kΩ (NPN) and 10kΩ (PNP), a minimum DC current gain of 80 at 10mA, and a maximum collector-emitter saturation voltage of 0.3V. The lead-frame SMT package measures 2mm x 1.25mm x 0.9mm with a 0.65mm pin pitch, operating across a temperature range of -55°C to 150°C.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba RN47A4(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
USV
Lead Shape
Gull-wing
Pin Count
5
PCB
5
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
0.65
Package Weight (g)
0.006
Package Material
Plastic
Mounting
Surface Mount
Type
NPN|PNP
Configuration
Dual
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
100mA
Maximum Power Dissipation
200mW
Typical Input Resistor
47@NPN|10@PNPkOhm
Typical Resistor Ratio
1@NPN|0.213@PNP
Maximum Collector-Emitter Saturation Voltage
[email protected]@5mAV
Minimum DC Current Gain
80@10mA
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba RN47A4(TE85R,F) Datasheet
Download the complete datasheet for Toshiba RN47A4(TE85R,F) to view detailed technical specifications.
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