The Toshiba RN4985(T5LSAMS1,F) is a dual NPN/PNP transistor with a maximum collector-emitter voltage of 50V and a maximum continuous DC collector current of 100mA. It has a maximum power dissipation of 200mW and a typical input resistor of 2.2. The transistor is packaged in a SOT-363 package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba RN4985(T5LSAMS1,F) technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Type | NPN|PNP |
| Configuration | Dual |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum Continuous DC Collector Current | 100mA |
| Maximum Power Dissipation | 200mW |
| Typical Input Resistor | 2.2kOhm |
| Typical Resistor Ratio | 0.047 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@5mAV |
| Minimum DC Current Gain | 80@10mA@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba RN4985(T5LSAMS1,F) Datasheet
Download the complete datasheet for Toshiba RN4985(T5LSAMS1,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.