TRIAC semiconductor for AC power control. Features 600V repetitive peak voltage, 12A RMS on-state current, and 132A surge current rating. Housed in a 3-pin TO-220NIS through-hole package with a 2.54mm pin pitch. Operates from -40°C to 125°C with a maximum gate trigger current of 30mA and voltage of 1.5V.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba SM12JZ47(ELBMATUD) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Repetitive Peak Reverse Voltage
600V
Repetitive Peak Forward Blocking Voltage
600V
RMS On-State Current
12A
Surge Current Rating
132A
Maximum Holding Current
50mA
Maximum Gate Trigger Current
30mA
Maximum Gate Trigger Voltage
1.5V
Peak On-State Voltage
1.5@17AV
Repetitive Peak Off-State Current
0.02mA
Maximum Rate of Rise of Off-State Voltage
300(Typ)V/us
Maximum Rate of Rise of On-State Current
50A/us
Min Operating Temperature
-40°C
Max Operating Temperature
125°C
Operating Junction Temperature
-40 to 125°C
Compliance
Cage Code
S0562
HTS Code
8541300080
Schedule B
8541300080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba SM12JZ47(ELBMATUD) Datasheet
Download the complete datasheet for Toshiba SM12JZ47(ELBMATUD) to view detailed technical specifications.
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