P-channel enhancement mode MOSFET, silicon, 30V drain-source voltage, 1.7A continuous drain current. Features 400mOhm maximum drain-source resistance at 4V and 240pF typical input capacitance at 10V Vds. This single-element transistor is housed in a 3-pin SOT package with gull-wing leads for surface mounting. Operating temperature range from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J01T(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TSM |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 1.7A |
| Material | Si |
| Maximum Drain Source Resistance | 400@4VmOhm |
| Typical Input Capacitance @ Vds | 240@10VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3J01T(BRA) Datasheet
Download the complete datasheet for Toshiba SSM3J01T(BRA) to view detailed technical specifications.
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