P-channel enhancement mode MOSFET for small signal applications. Features a 30V maximum drain-source voltage and 1.5A maximum continuous drain current. Surface mountable in a 3-pin TSM package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operates from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J02T(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TSM |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 1.5A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 500@4VmOhm |
| Typical Input Capacitance @ Vds | 150@10VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3J02T(BRA) Datasheet
Download the complete datasheet for Toshiba SSM3J02T(BRA) to view detailed technical specifications.
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