P-channel enhancement mode MOSFET, single element, silicon, designed for small signal applications. Features a maximum drain-source voltage of 30V and a continuous drain current of 0.1A. Packaged in a 3-pin USM (SOT-323) surface-mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum gate threshold voltage of 1.7V and a maximum drain-source resistance of 12000 mOhm at 4V. Operates within a temperature range of -55°C to 150°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J15FU(TE85R,F) technical specifications.
General
Package Family Name
USM
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Gate Threshold Voltage
1.7V
Maximum Drain Source Resistance
12000@4VmOhm
Typical Input Capacitance @ Vds
9.1@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J15FU(TE85R,F) Datasheet
Download the complete datasheet for Toshiba SSM3J15FU(TE85R,F) to view detailed technical specifications.
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