P-channel enhancement mode MOSFET, single element, silicon, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Housed in a 3-pin USM (SOT-323) surface-mount package measuring 2mm x 1.25mm x 0.9mm. Offers a maximum drain-source resistance of 8000 mOhm at 4V and typical input capacitance of 11pF at 3V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J16FU(TE85R) technical specifications.
General
| Package Family Name | USM |
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Drain Source Resistance | 8000@4VmOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3J16FU(TE85R) Datasheet
Download the complete datasheet for Toshiba SSM3J16FU(TE85R) to view detailed technical specifications.
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