P-channel silicon MOSFET, surface mount, single configuration, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Housed in a 3-pin TESM plastic package with dimensions of 1.4mm (L) x 0.8mm (W) x 0.59mm (H) and a 0.45mm pin pitch. Operates within a temperature range of -55°C to 150°C.
PackageTESM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J16TE(F) technical specifications.
General
Package/Case
TESM
Pin Count
3
PCB
3
Package Length (mm)
1.4
Package Width (mm)
0.8
Package Height (mm)
0.59
Seated Plane Height (mm)
0.59
Pin Pitch (mm)
0.45
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Gate Threshold Voltage
1.1V
Maximum Drain Source Resistance
8000@4VmOhm
Typical Input Capacitance @ Vds
11@3VpF
Maximum Power Dissipation
100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM3J16TE(F) Datasheet
Download the complete datasheet for Toshiba SSM3J16TE(F) to view detailed technical specifications.
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