P-channel MOSFET, surface mount, SOT-23-3 package. Features 20V Drain-Source Voltage (Vdss) and 6A Continuous Drain Current (ID). Offers low on-resistance with Rds On Max of 29.8mR and Drain to Source Resistance of 47.4mR. Operates with a Gate to Source Voltage (Vgs) of 8V and exhibits 840pF input capacitance. Maximum power dissipation is 1W, with operating temperatures ranging from -55°C to 150°C. Includes turn-on delay of 32ns and turn-off delay of 107ns.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Toshiba SSM3J328R,LF technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 47.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 840pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 29.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 107ns |
| Turn-On Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3J328R,LF Datasheet
Download the complete datasheet for Toshiba SSM3J328R,LF to view detailed technical specifications.
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