P-channel MOSFET in SOT-23-3 package for surface mount applications. Features a continuous drain current of 6A and a drain to source breakdown voltage of -30V. Offers a low drain to source resistance of 144mΩ at a gate to source voltage of 12V, with an Rds On max of 42mΩ. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1W. Includes 560pF input capacitance and is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Toshiba SSM3J332R,LF technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 144mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 560pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3J332R,LF Datasheet
Download the complete datasheet for Toshiba SSM3J332R,LF to view detailed technical specifications.
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