P-channel enhancement mode MOSFET, single element, silicon. Features 20V drain-source voltage, ±8V gate-source voltage, and 0.33A continuous drain current. Surface mountable in a 3-pin SSM (SOT-416) package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Maximum power dissipation is 150mW, with an operating temperature range of -55°C to 150°C.
PackageSSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM3J36FS(TE85L.F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
0.33A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
1.2@4VnC
Typical Input Capacitance @ Vds
43@10VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3J36FS(TE85L.F) Datasheet
Download the complete datasheet for Toshiba SSM3J36FS(TE85L.F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.