P-channel MOSFET, 20V drain-source voltage, 800mA continuous drain current. Features 390mΩ maximum on-resistance and 100pF input capacitance. Encased in a SOT-723 package for surface mounting, with a maximum power dissipation of 150mW. Supplied in cut tape packaging.
PackageSOT-723
MountingSurface Mount
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Technical Specifications
Toshiba SSM3J56MFV,L3F technical specifications.
General
| Package/Case | SOT-723 |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 100pF |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 390mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3J56MFV,L3F Datasheet
Download the complete datasheet for Toshiba SSM3J56MFV,L3F to view detailed technical specifications.
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