N-channel enhancement mode MOSFET, silicon, single element, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Housed in a 3-pin ESM surface-mount package with flat leads, measuring 1.6mm x 0.85mm x 0.7mm. Operates within a temperature range of -55°C to 150°C.
PackageESM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K03FE(BRA) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | ESM |
| Package/Case | ESM |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 0.85 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.7 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3K03FE(BRA) Datasheet
Download the complete datasheet for Toshiba SSM3K03FE(BRA) to view detailed technical specifications.
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