N-channel enhancement mode silicon MOSFET for small signal applications. Features a 20V drain-source voltage, 0.1A continuous drain current, and 12000 mOhm maximum drain-source resistance at 2.5V. Housed in a 3-pin ESM lead-frame SMT package with flat leads, measuring 1.6mm x 0.85mm x 0.7mm, and a 0.5mm pin pitch. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 100mW.
PackageESM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K03FE(TPL3) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
ESM
Package/Case
ESM
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.85
Package Height (mm)
0.7
Seated Plane Height (mm)
0.7
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
Typical Input Capacitance @ Vds
11@3VpF
Maximum Power Dissipation
100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3K03FE(TPL3) Datasheet
Download the complete datasheet for Toshiba SSM3K03FE(TPL3) to view detailed technical specifications.
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