N-channel enhancement mode MOSFET for surface mount applications. Features 30V maximum drain-source voltage and 3.9A maximum continuous drain current. This single-element transistor is housed in a compact 3-pin UFM package with dimensions of 2mm x 1.7mm and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 32mΩ at 10V and a typical gate charge of 20.5nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageUFM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K126TU technical specifications.
General
| Package/Case | UFM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.7 |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.9A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.6V |
| Maximum Drain Source Resistance | 32@10VmOhm |
| Typical Gate Charge @ Vgs | 20.5@10VnC |
| Typical Gate Charge @ 10V | 20.5nC |
| Typical Input Capacitance @ Vds | 720@15VpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba SSM3K126TU Datasheet
Download the complete datasheet for Toshiba SSM3K126TU to view detailed technical specifications.
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