N-channel enhancement mode power MOSFET for surface mount applications. Features a 30V drain-source voltage, 3A continuous drain current, and low 95mOhm drain-source resistance at 10V. Housed in a 3-pin TSM (SOT) package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operates from -55°C to 150°C with a maximum power dissipation of 1250mW.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K12T(BRA,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
TSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.7
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3A
Material
Si
Maximum Drain Source Resistance
95@10VmOhm
Typical Gate Charge @ Vgs
2.6@4VnC
Typical Input Capacitance @ Vds
120@15VpF
Maximum Power Dissipation
1250mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba SSM3K12T(BRA,F) Datasheet
Download the complete datasheet for Toshiba SSM3K12T(BRA,F) to view detailed technical specifications.
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