N-channel enhancement mode MOSFET, 30V drain-source voltage, 4A continuous drain current. Features 39mΩ maximum drain-source on-resistance at 10V, 5nC typical gate charge at 4V, and 460pF typical input capacitance at 15V. Surface mountable in a 3-pin TSM (SOT) package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operating temperature range from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K14T(T5LJRC) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
TSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.7
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS II
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
4A
Material
Si
Maximum Drain Source Resistance
39@10VmOhm
Typical Gate Charge @ Vgs
5@4VnC
Typical Input Capacitance @ Vds
460@15VpF
Maximum Power Dissipation
1250mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3K14T(T5LJRC) Datasheet
Download the complete datasheet for Toshiba SSM3K14T(T5LJRC) to view detailed technical specifications.
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