N-channel MOSFET, small signal, single element, enhancement mode, silicon. Features 30V drain-source voltage, 0.1A continuous drain current, and 4000mOhm maximum drain-source resistance at 4V. Packaged in a 3-pin lead-frame SMT SSM (SOT-416) with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Surface mountable with a pin pitch of 0.5mm, operating from -55°C to 150°C.
Toshiba SSM3K15FS(TE85R) technical specifications.
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