N-channel MOSFET in a SOT-23-3 surface mount package. Features a continuous drain current of 3.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance of 290mΩ at a gate-to-source voltage of 12V. Includes a maximum power dissipation of 1W and exhibits turn-on delay time of 9.2ns and turn-off delay time of 6.4ns. RoHS compliant and supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Toshiba SSM3K329R,LF technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 880um |
| Input Capacitance | 123pF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 126mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 6.4ns |
| Turn-On Delay Time | 9.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM3K329R,LF Datasheet
Download the complete datasheet for Toshiba SSM3K329R,LF to view detailed technical specifications.
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