N-channel enhancement mode power MOSFET in a 3-pin SOT-23F surface-mount package. Features a 30V drain-source voltage, 6A continuous drain current, and 38mΩ maximum drain-source resistance at 10V. Utilizes U-MOS VII-H process technology for efficient operation. Designed for automotive applications with a wide operating temperature range of -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K335R technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23F |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.8 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.011 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VII-H |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 38@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 340@15VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba SSM3K335R Datasheet
Download the complete datasheet for Toshiba SSM3K335R to view detailed technical specifications.
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