N-channel enhancement mode MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 0.5A maximum continuous drain current. This single-element transistor is housed in a compact 3-pin VESM surface-mount plastic package with dimensions of 1.2mm x 0.8mm. Key electrical characteristics include a maximum drain-source on-resistance of 630mΩ at 5V and a typical gate charge of 1.23nC at 4V. Operating temperature range is -55°C to 150°C.
PackageVESM
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K36MFV(TL3,T) technical specifications.
General
| Package/Case | VESM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.2 |
| Package Width (mm) | 0.8 |
| Seated Plane Height (mm) | 0.5 |
| Pin Pitch (mm) | 0.4 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.5A |
| Material | Si |
| Maximum Drain Source Resistance | 630@5VmOhm |
| Typical Gate Charge @ Vgs | 1.23@4VnC |
| Typical Input Capacitance @ Vds | 46@10VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba SSM3K36MFV(TL3,T) Datasheet
Download the complete datasheet for Toshiba SSM3K36MFV(TL3,T) to view detailed technical specifications.
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