N-channel enhancement mode MOSFET, designed for small signal applications. Features a 60V drain-source voltage and 0.2A continuous drain current. Packaged in a 3-pin S-Mini surface-mount plastic lead-frame with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Utilizes U-MOS IV process technology.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba SSM3K7002BF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Gate Threshold Voltage
3.1V
Maximum Drain Source Resistance
2100@10VmOhm
Typical Input Capacitance @ Vds
17@25VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba SSM3K7002BF Datasheet
Download the complete datasheet for Toshiba SSM3K7002BF to view detailed technical specifications.
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