N-channel enhancement mode MOSFET, single element, silicon, designed for small signal applications. Features a maximum drain-source voltage of 60V and a continuous drain current of 0.2A. Surface mountable in a 3-pin USM (SOT-323) package, measuring 2mm x 1.25mm x 0.9mm. Offers a maximum drain-source on-resistance of 3000 mOhm at 10V and a typical input capacitance of 17pF at 25V. Operates across a temperature range of -55°C to 150°C.
PackageUSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba SSM3K7002FU(BRA) technical specifications.
General
Package Family Name
USM
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Material
Si
Maximum Drain Source Resistance
3000@10VmOhm
Typical Input Capacitance @ Vds
17@25VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM3K7002FU(BRA) Datasheet
Download the complete datasheet for Toshiba SSM3K7002FU(BRA) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.