N-channel enhancement mode MOSFET, dual common source configuration, designed for surface mounting. Features a 5-pin ESV package with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. Operates with a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Offers a low pin pitch of 0.5mm and a maximum power dissipation of 150mW, suitable for small signal applications.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba SSM5N03FE(TPL3) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
ESV
Lead Shape
Flat
Pin Count
5
PCB
5
Package Length (mm)
1.6
Package Width (mm)
1.2
Package Height (mm)
0.55
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Common Source
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
0.1A
Material
Si
Maximum Drain Source Resistance
Typical Input Capacitance @ Vds
11@3VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba SSM5N03FE(TPL3) Datasheet
Download the complete datasheet for Toshiba SSM5N03FE(TPL3) to view detailed technical specifications.
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